Bulletin of the American Physical Society
68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing
Volume 60, Number 9
Monday–Friday, October 12–16, 2015; Honolulu, Hawaii
Session IW2: Ion Assisted Deposition |
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Chair: Mineo Hiramatsu, Meijo University Room: 308 AB |
Wednesday, October 14, 2015 8:00AM - 8:15AM |
IW2.00001: Superhard Coatings Synthesis Assisted by Pulsed Beams of High-Energy Gas Molecules Alexander Metel, Vasily Bolbukov, Marina Volosova, Sergei Grigoriev, Yury Melnik For production of nanocomposite superhard (HV 5000) and fracture-tough coatings on dielectric substrates a source of metal atoms accompanied by pulsed beams of 30-keV neutral molecules was used. The source is equipped with two parallel equipotential grids placed between a magnetron target and a substrate. Negative high-voltage pulses applied to the high-transparency grids accelerate from the magnetron plasma ions, which are transformed into high-energy neutral molecules due to charge-exchange collisions with gas molecules between the grids. Mixing of the substrate and coating materials through bombardment by high-energy gas molecules results in an adequate compressive stress of the coating and interface width exceeding 1 $\mu$m, which allows deposition of 100-$\mu$m-thick coatings with a perfect adhesion. [Preview Abstract] |
Wednesday, October 14, 2015 8:15AM - 8:30AM |
IW2.00002: Effects of ion bombardments on electronic properties of amorphous carbon films grown by plasma-enhanced chemical vapor deposition Hirotsugu Sugiura, Lingyun Jia, Hiroki Kondo, Kenji Ishikawa, Keigo Takeda, Makoto Sekine, Masaru Hori Amorphous carbon (a-C) films show huge variety of optical and electronic properties, because of a mixture of sp$^{2}$ and sp$^{3}$ bonding carbon. Therefore, it's expected to apply a-C films to optical and electrical device applications, such as solar cells. However, there has been no report about a photovoltaic effect in a-C junction solar cells. Growth mechanism and relationship between plasma factors and film properties are not clarified yet. It is important to clear the effect of radicals and ions on their film properties. In this study, a-C films were synthesized by a radical-injection plasma-enhanced chemical vapor deposition at 550 degree C, in which 20 or 250 W VHF powers was applied to capacitively-coupled plasma (CCP). And, RF bias powers were applied to substrates to control the self-bias voltage (V$_{DC})$. V$_{DC}$ values were adjusted to 200, 275, and 400V, respectively. As the CCP power increased, optical emission intensity of C$_{2}$ radicals increased, and G-band peaks became shaper which indicates development of graphitization. With increasing the V$_{DC}$, optical band gap decreased and conductivity increased. From these results, it was found that formation of sp$^{2}$ bonds and modification of energy bandgap can be realized by control of ion energy. [Preview Abstract] |
Wednesday, October 14, 2015 8:30AM - 8:45AM |
IW2.00003: In-situ monitoring of plasma ion assisted deposition (PIAD) processes Jens Harhausen, R\"udiger Foest, Detlef Loffhagen Present photonics applications depend on accurate production techniques. Plasma based processes might be termed the backbone of multilayer optical coatings which are the key components of dielectric mirrors, filters or antireflectives. However, the sector strongly relies on process recipies based on empirical optimization of thin film properties. Limitations in quality, repeatability and yield are faced. In this contribution results of efforts on plasma characterization of a beam source employed for PIAD are presented. Data on electron and ion kinetics as well as optical emission facilitated a comprehensive understanding of underlying physics of ion beam generation and propagation in an industrial type batch coater. In order to promote the development of next generation production plants, concepts for in-situ diagnostics are investigated. Results from monitoring of optical radiance of the plasma plume near the source and electron density near the substrates are discussed. The novel concept of the multipole resonance probe is applied during deposition in order to trace variations not only in magnitude of plasma density, but also its spatial distribution. Coating materials comprise TiO${_2}$, Ta${_2}$O${5}$, Al${_2}$O${_3}$ and SiO${_2}$. [Preview Abstract] |
Wednesday, October 14, 2015 8:45AM - 9:00AM |
IW2.00004: ICP-Enhanced Sputter Deposition for Reactivity Control and Low-Temperature Formation of a-IGZO Films Yuichi Setsuhara, Keitaro Nakata, Yoshikatsu Satake, Kosuke Takenaka, Giichiro Uchida, Akinori Ebe Inductively coupled plasma (ICP) - enhanced sputter deposition for a-IGZO channel TFTs fabrication have been performed. This advantage of fine control of reactivity during the deposition process is of great significance for film deposition of the transparent amorphous oxide semiconductor, a-InGaZnO$_{x}$ (a-IGZO), whose electrical properties are significantly sensitive to the reactivity during the film deposition. The a-IGZO film deposition with addition of H$_{2}$ gas were performed in order to control oxidation process during a-IGZO film formation via balance between oxidation-reduction. The results of optical emission spectrum indicate the possibility for the suppression of oxidation by oxygen atoms of a-IGZO films during deposition due to addition of H$_{2}$ gas. The characteristics of TFT fabricated with IGZO film via plasma-enhanced magnetron sputter deposition system have been investigated. The result exhibits that the possibility of expanding process window for control of balance between oxidization and reduction by addition of H$_{2}$ gas. The a-IGZO channel TFTs fabricated plasma-enhanced reactive sputtering system with addition of H$_{2}$ gas exhibited good performance of field-effect mobility 15.3 cm$^{2}$ (Vs)$^{-1}$ and subthreshold gate voltage swing (S) of 0.48 V decade$^{-1}$. [Preview Abstract] |
Wednesday, October 14, 2015 9:00AM - 9:15AM |
IW2.00005: Plasma deposition of amorphous silicon carbide thin films irradiated with neutrons J. Huran, P. Bohacek, M. Kucera, A. Kleinova, V. Sasinkova Amorphous silicon carbide and N-doped silicon carbide thin films were deposited on P-type Si(100) wafer by plasma enhanced chemical vapor deposition (PECVD) technology using silane, methane, ammonium and argon gases. The concentration of elements in the films was determined by RBS and ERDA method. Chemical compositions were analyzed by FTIR spectroscopy. Photoluminescence properties were studied by photoluminescence spectroscopy (PL). Irradiation of samples with various neutron fluencies was performed at room temperature. The films contain silicon, carbon, hydrogen, nitrogen and small amount of oxygen. From the IR spectra, the films contained Si-C, Si-H, C-H, Si-N, N-H and Si-O bonds. No significance effect on the IR spectra after neutron irradiation was observed. PL spectroscopy results of films showed decreasing PL intensity after neutron irradiation and PL intensity decreased with increased neutron fluencies. The measured current of the prepared structures increased after irradiation with neutrons and rise up with neutron fluencies. [Preview Abstract] |
Wednesday, October 14, 2015 9:15AM - 9:30AM |
IW2.00006: Feature Scale Simulations of Deposition Processes Paul Moroz, Daniel J. Moroz Deposition processes, together with etching, planarization, and implantation, represent the basis of materials processing. Requirements for the accuracy of processing are becoming ever more stringent and thus the role of numerical simulations grows. The feature scale simulator FPS3D [1,2] allows detailed simulation of simultaneous deposition, etching, and implantation processes. In this report, we emphasize FPD3D's capability to simulate deposition. We simulate and analyze the deposition of copper seed layer films into high-aspect-ratio features, examining the profile conformity and feature-filling quality of the deposited copper layers and their dependence on the energy and angular distributions of incoming fluxes of species. A number of cases were analyzed, including the following: isotropic flow of Cu, directional flow of Cu, isotropic flow of Cu together with ions, and directional flow of Cu together with ions. It was found that directional flow of Cu together with ions has significant advantages over other options, allowing efficient Cu seed layer deposition even for small high-aspect-ratio features. We also discuss detailed structure of deposited layers such as agglomeration into islands with specific orientation and film roughness.\\[4pt] [1] P. Moroz, IEEE Trans. on Plasma Science, 39 (11) 2804 (2011)\\[0pt] [2] P. Moroz, D. J. Moroz, ECS Transactions, 50 (46) 61 (2013). [Preview Abstract] |
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