Bulletin of the American Physical Society
66th Annual Gaseous Electronics Conference
Volume 58, Number 8
Monday–Friday, September 30–October 4 2013; Princeton, New Jersey
Session NR2: Plasma-surface Interactions
10:00 AM–12:15 PM,
Thursday, October 3, 2013
Room: Ballroom II
Chair: Yevgeny Raitses, Princeton Plasma Physics Laboratory
Abstract ID: BAPS.2013.GEC.NR2.3
Abstract: NR2.00003 : Molecular dynamics simulation of plasma-induced Si substrate damage: Latent defect structures and bias-frequency effects*
10:30 AM–10:45 AM
Preview Abstract Abstract
Authors:
Koji Eriguchi
(Kyoto University)
Asahiko Matsuda
(Kyoto University)
Yoshinori Takao
(Kyoto University)
Kouichi Ono
(Kyoto University)
*Grant-in-Aid for Scientific Research (B) 23360321 from JSPS
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2013.GEC.NR2.3
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