Bulletin of the American Physical Society
66th Annual Gaseous Electronics Conference
Volume 58, Number 8
Monday–Friday, September 30–October 4 2013; Princeton, New Jersey
Session LW1: Plasma Etching
3:30 PM–5:30 PM,
Wednesday, October 2, 2013
Room: Ballroom I
Chair: Vincent Donnelly, University of Houston
Abstract ID: BAPS.2013.GEC.LW1.6
Abstract: LW1.00006 : Molecular Dynamics Analysis of Surface Reaction Kinetics during Si Etching in Cl-based Plasmas: Effects of Etch By-Products Ion Incidence
5:00 PM–5:15 PM
Preview Abstract Abstract
Authors:
Nobuya Nakazaki
(Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University)
Yoshinori Takao
(Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University)
Koji Eriguchi
(Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University)
Kouichi Ono
(Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2013.GEC.LW1.6
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