Bulletin of the American Physical Society
65th Annual Gaseous Electronics Conference
Volume 57, Number 8
Monday–Friday, October 22–26, 2012; Austin, Texas
Session NW1: Poster Session I (7:00-9:30PM)
Wednesday, October 24, 2012
Room: Salon CDE
Abstract ID: BAPS.2012.GEC.NW1.72
Abstract: NW1.00072 : In-situ Monitoring of Surface Modification of GaN Films Exposed to Inductively-Coupled Plasmas*
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*This work is partly supported by the 2nd stage Knowledge Cluster Initiative and Grant-in-Aid for Scientific Research (C) from the Ministry of Education, Culture, Sports, Science and Technology of Japan.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2012.GEC.NW1.72
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