Session Index

Session QR2: Plasma Etching II

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Abstracts
Chair: Remi Dussart, Universite d'Orleans
Room: 151


Thursday, October 7, 2010
4:00PM - 4:30PM

QR2.00001: Plasma-surface interactions in plasma etching processes for nanometer-scale microelectronic devices
Invited Speaker: Kouichi Ono

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Thursday, October 7, 2010
4:30PM - 4:45PM

QR2.00002: Simulations of an Ar/HBr/O$_2$ microwave source etch process and the effect of SiBr and SiBr$_2$ cross-sections on computed etch-profiles
James Munro , Jonathan Tennyson , Song-Yun Kang , Daniel Brown

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Thursday, October 7, 2010
4:45PM - 5:00PM

QR2.00003: Global Models for Virtual Metrology and Closed Loop Process Control
Stephen Daniels , Yang Zhang , Bernard Keville , Evgueni Gudimenko , Chanel Hayden , Anthony Holohan , Miles Turner

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Thursday, October 7, 2010
5:00PM - 5:30PM

QR2.00004: Fine ion energy control for sub-32 nm node device RIE using pulsed-DC superimposed 100 MHz rf CCP
Invited Speaker: H. Hayashi

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Thursday, October 7, 2010
5:30PM - 5:45PM

QR2.00005: Modification of Si-O-Si Structure in Porous SiOCH Low-$k$ Films with Ions, Radicals, and VUV Radiation in O$_{2}$ Plasma
Hiroshi Yamamoto , Kohei Asano , Keigo Takeda , Kenji Ishikawa , Hiroki Kondo , Makoto Sekine , Masaru Hori

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Thursday, October 7, 2010
5:45PM - 6:00PM

QR2.00006: Study of a Charging Voltage during SiO$_{2}$ Etching in a 2f-CCP
Takashi Yagisawa , Tetsuya Tatsumi , Toshiaki Makabe

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