Thursday, October 7, 2010
4:00PM - 4:30PM
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QR2.00001: Plasma-surface interactions in plasma etching processes for nanometer-scale microelectronic devices
Invited Speaker:
Kouichi Ono
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Thursday, October 7, 2010
4:30PM - 4:45PM
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QR2.00002: Simulations of an Ar/HBr/O$_2$ microwave source etch process and the effect of SiBr and SiBr$_2$ cross-sections on computed etch-profiles
James Munro
, Jonathan Tennyson
, Song-Yun Kang
, Daniel Brown
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Thursday, October 7, 2010
4:45PM - 5:00PM
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QR2.00003: Global Models for Virtual Metrology and Closed Loop Process Control
Stephen Daniels
, Yang Zhang
, Bernard Keville
, Evgueni Gudimenko
, Chanel Hayden
, Anthony Holohan
, Miles Turner
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Thursday, October 7, 2010
5:00PM - 5:30PM
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QR2.00004: Fine ion energy control for sub-32 nm node device RIE using pulsed-DC superimposed 100 MHz rf CCP
Invited Speaker:
H. Hayashi
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Thursday, October 7, 2010
5:30PM - 5:45PM
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QR2.00005: Modification of Si-O-Si Structure in Porous SiOCH Low-$k$ Films with Ions, Radicals, and VUV Radiation in O$_{2}$ Plasma
Hiroshi Yamamoto
, Kohei Asano
, Keigo Takeda
, Kenji Ishikawa
, Hiroki Kondo
, Makoto Sekine
, Masaru Hori
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Thursday, October 7, 2010
5:45PM - 6:00PM
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QR2.00006: Study of a Charging Voltage during SiO$_{2}$ Etching in a 2f-CCP
Takashi Yagisawa
, Tetsuya Tatsumi
, Toshiaki Makabe
Preview Abstract |