Bulletin of the American Physical Society
63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas
Volume 55, Number 7
Monday–Friday, October 4–8, 2010; Paris, France
Session LW4: Plasma Deposition II |
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Chair: Nader Sadeghi, Universite Joseph Fourier, Grenoble Room: Grand Amphitheatre |
Wednesday, October 6, 2010 4:00PM - 4:15PM |
LW4.00001: High growth rate of GaN homoepitaxy by molecular beam epitaxy using high density nitrogen radical source Yohjiro Kawai, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Shang Chen, Hiroki Kondo, Mineo Hiramatsu, Masaru Hori The key issues for the GaN growth by RF-plasma-assisted molecular beam epitaxy (MBE) are the low growth rate compared with the growth rate obtained using an ammonia-source. To reduce the processing time and to improve the crystalline quality of the epilayer, a high-density radical source (HDRS) with high stability has been developed. The growth rate of GaN was more improved using the HDRS than using a conventional radical source (CRS). During the growth, a sharp streak pattern obtained by reflection high-energy electron diffraction (RHEED) was maintained. An atomically smooth surface was confirmed by atomic force microscopy (AFM). [Preview Abstract] |
Wednesday, October 6, 2010 4:15PM - 4:30PM |
LW4.00002: New Phases of Boron Nitride Grown by Laser-Plasma Synchronous Chemical Vapor Deposition Shojiro Komatsu, Kazuaki Kobayashi, Takahiro Nagata, Toyohiro Chikyo Dense sp3-bonded phases of boron nitride (BN) are known to grow under extremely high-pressure and high-temperature conditions like diamond is. However, we found that they grew at low pressures around 10 Torr and temperatures below 800$^{\circ}$ by plasma-assisted chemical vapor deposition where a pulsed excimer-laser at 193nm irradiating on the growing film surface induced highly nonequillibirum conditions. New polytypic forms of sp3-bonded BN, i.e., 5H-, 6H-, and 30H-BN were found and their crystal structures were discussed in terms of metastability, ionicity, hexagonality, and close-packing index. Based on the detailed analyses of the polytypic strtuctures of BN in comparison with C, SiC and AlN, we propose the ``Bond Strength Initiative Rule'', which helps to explain the growth of nonequillibrium phases from the vapor. [Preview Abstract] |
Wednesday, October 6, 2010 4:30PM - 4:45PM |
LW4.00003: Silicon carbon nitrid thin films prepared by PECVD technology Jozef Huran, Pavol Boh\'a\v{c}k, Valery N. Shvetsov, Alexander P. Kobzev, Albin Valovi\v{c} The deposition of silicon carbon nitride has been widely studied due to their attractive properties, such as wear resistance, chemically inertness and wide band gap, which provide optical, electronic and other applications. Silicon carbon nitride films were grown by the plasma enhanced chemical vapour deposition (PE CVD) technique. The flow rates of SiH$_{4}$, CH$_{4}$ and NH$_{3}$ gases were 10 sccm, 30 sccm and 15 sccm, respectively. The deposition temperatures were 350, 400 and 450\r{ }C respectively. The concentration of species in the SiCN films was determined by Rutherford backscattering spectrometry (RBS). Chemical compositions were analyzed by infrared spectroscopy. The hydrogen concentration was determined by the elastic recoil detection (ERD) method. Irradiation of samples by fast neutrons in IREN accelerator at JINR Dubna was used for radiation hardness investigation. Photoluminescence spectra were measured at 6 K and 300 K. The electrical properties of SiCN films were determined by I-V and C-V measurement. The properties of SiCN films are discussed on the base of the obtained results. [Preview Abstract] |
Wednesday, October 6, 2010 4:45PM - 5:00PM |
LW4.00004: Infrared spectroscopic study on substrate bias effects on amorphous carbon deposition process during acetylene plasma Masanori Shinohara, Taka-aki Kawakami, Kojiro Hara, Yoshinobu Matsuda, Hiroshi Fujiyama, Yuki Nitta, Tatsuyuki Nakatani An amorphous carbon film has been widely used in many fields, because of its useful property. In these days, the requirements to the film became sever. Then, the film deposition process should be controlled in an atomic level. There are a lot of process parameters for film deposition. One of the important parameters is substrate bias. The ions generated in plasma play an important role in film deposition. However, the detailed mechanism has not understood. Then, we investigate the deposition process and substrate bias effects with infrared spectroscopy in multiple internal reflection geometry (MIR-IRAS). We will show the substrate bias effects on film deposition process in this presentation; hydrogen ions drawn with substrate bias etched the polymer components, while the hydrocarbon ions drawn with substrate bias contribute to the film deposition. [Preview Abstract] |
Wednesday, October 6, 2010 5:00PM - 5:15PM |
LW4.00005: Synthesis of bio-compatible coatings stimulated by electron-beam plasma Tatiana Vasilieva, Sergey Lysenko, Vadim Kukareko The synthesis of oxides at the inner surface of the titanium tube was studied experimentally. The plasma was generated injecting the electron beam along the tube filled with O$_{2}$. The sample temperature in the act of the treatment and the oxide layer thickness were controlled by varying the beam current, the oxygen pressure, and the treatment duration. The Auger spectrometry and X-ray structural phase analysis showed TiO$_{2}$ in the rutile form to predominate in the coatings chemical composition. The atomic force microscopy showed that the oxidation didn't change the tube wall structure. The optimal micro-relief of the surface can be formed preliminarily by means of conventional techniques and the plasmachemical treatment is able to additionally improve the surface bio-compatibility. The computer simulation of plasma-surface interaction was carried out to predict the plasma composition, to find the spatial distribution of the sample temperature, and to calculate the flows of the chemically active plasma particles bombarding the tube wall. The flows of atomic and singlet oxygen were found to be the most intensive and, therefore, these particles are responsible for the formation of the biocompatible TiO$_{2}$-coatings. [Preview Abstract] |
Wednesday, October 6, 2010 5:15PM - 5:30PM |
LW4.00006: Investigation of nanoparticle growth in ECR based plasma using Langmuir probe Pavel Yuryev, Alexander Drenik, Maria Calafat, Freddy Gaboriau, Richard Clergereaux When combining nanoparticle growth in the volume phase and matrix deposition on the surfaces, cold plasma process is an interesting route to form nanocomposite thin films in one single step. Although working conditions are not favorable for growth mechanism in the plasma volume, microwave multipolar plasma excited at distributed electron cyclotron resonance in acetylene leads to the formation of powders. The first attempt to explain it was the presence of strong magnetic field. To investigate it, measurements by a cylindrical Langmuir probe were performed along the process for different probe positions in the ECR reactor. These measurements were locally affected depending on the plasma parameters: for example, Bohm criterion was not every time satisfied. It suggests that the high magnetic field confines negatively charged species increasing the recombination probability and contributing to the formation of nanoparticles. [Preview Abstract] |
Wednesday, October 6, 2010 5:30PM - 5:45PM |
LW4.00007: RF-Plasma Controlled High-Yield Synthesis and Properties of Nitrogen Endohedral Fullerene Soon Cheon Cho, Toshiro Kaneko, Rikizo Hatakeyama The nitrogen atom endohedral fullerene (N@C$_{60})$ has been synthesized by sublimating a fullerene (C$_{60})$ and irradiating nitrogen ions to the fullerene using a radio-frequency (RF) plasma at low pressures for the purpose of achieving its high yield and purity. Here external control of direct-current (DC) bias voltages applied to functional electrodes in the RF plasma is found to enables us to instantaneously and highly generate nitrogen molecule ions (N$_{2}^{+})$ which are indispensable among the nitrogen plasma parameters for synthesizing the high purity/yield N@C$_{60}$. Then, it is clarified that an optimum condition for the high-density generation of N$_{2}^{+}$ is obtained by controlling the negative and positive bias voltages of a plasma-separation grid and a plasma-terminating plate, respectively. In more detail the potential difference caused by the bias voltages produces an electron beam which effectively ionizes the nitrogen molecules. The generated N$_{2}^{+}$ ions arriving in front of a substrate immersed in the plasma are accelerated by the potential difference between the negatively biased substrate and the plasma, and are irradiated to a large amount of C$_{60}$ sublimated from an oven and deposited on the substrate resulting in the high-purity and high-yield synthesis of N@C$_{60}$. [Preview Abstract] |
Wednesday, October 6, 2010 5:45PM - 6:00PM |
LW4.00008: Effects of deposition time on the structural and properties of nano-scale grain size beta-tantalum thin films produced by a magnetron sputtering system Davoud Dorranian, Elmira Solati, Mohammadreza Hantehzadeh, Mahmood Ghoranneviss, Amirhossein Sari This work investigated the effect of deposition time on beta-tantalum films deposited by direct current magnetron sputtering at ambient temperature on BK7 glass and 304 steel substrates. The films were characterized by X-ray diffraction, atomic force microscopy, four point probe, profilemeter, and spectrophotometer. The AFM micrographs showed the grain size was about 20-30 nm and 100-140 nm for glass and steel substrates, respectively. The salient feature in the present tantalum thin film with a nano-scale grain size is the higher resistivity of glass substrate samples in comparison with bulk coarse-grained tantalum. Due to the condition in this experiment, it can be claimed that in the case of tantalum sputtering, the sputtering power of 135 W leads to formation of nano-scale grain size thin films. Film properties are influenced by the substrate temperature even if the difference is so small due to heat conductivity of two materials such as glass and steel. [Preview Abstract] |
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