Bulletin of the American Physical Society
63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas
Volume 55, Number 7
Monday–Friday, October 4–8, 2010; Paris, France
Session FT: Special Evening Session |
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Chair: Makoto Sekine, Nagoya University Room: 151 |
Tuesday, October 5, 2010 8:00PM - 8:35PM |
FT.00001: Plasma Processing for Nanoelectronics --- History and Prospects Invited Speaker: Plasma processing is a crucial technology for fabricating trillions of nanometer-size transistors on a silicon wafer [1]. It evolved from humble beginnings in the early 1900's: the silver-coating of mirrors by physical sputtering in dc glow discharges. The late 1950's - early 1960's saw extensive studies of physical and reactive sputtering in capacitive rf reactors. Isotropic plasma etching, mainly for photoresist stripping, was developed in the late 1960's - early 1970's, and etching of many other important materials was demonstrated. Three key advances in the late 1970's made plasma processing technology indispensable: (a) the discovery of ion-enhanced (anisotropic) etching [2]; (b) the development of SiO$_2$ etching with high SiO$_2$/Si selectivity [3]; and (c) the controlled etching of passivating films, eg, Al$_2$O$_3$ over Al [4]. As scale-down to current 32 nm (100 atom) transistor gate lengths proceeded, etching discharges evolved from a first generation of ``low density'' reactors capacitively driven by a single source, to a second generation of ``high density'' reactors (inductive and electron cyclotron resonance) having two power sources, in order to control independently the ion flux and ion bombarding energy to the substrate. A third generation of ``moderate density'' reactors, driven capacitively by multiple frequency sources, is now used to further control processing characteristics, such as ion energy distributions, uniformity, and selectivity. There is yet much to be understood, e.g., the physics of multiple-frequency sheaths, nonlinear frequency interactions, and electromagnetic effects such as standing waves. Beyond the 6--11 nm transistor limit lies a decade of further improvements for conventional nanoelectronics, and beyond that, a dimly-seen future of spintronics, single-electron transistors, cross-bar latches, and molecular electronics. \\[4pt] [1] H. Abe, M. Yoneda and N. Fujiwara, ``Developments of Plasma Etching Technology for Fabricating Semiconductor Devices,'' Jpn. J. Appl. Phys. 47, 1435 (2008). \\[0pt] [2] N. Hosokawa, R. Matsuzaki and T. Asamaki, ``RF Sputter-Etching by Fluoro-Chloro-Hydrocarbon Gases,'' Jpn. J. Appl. Phys. Suppl. 2, Pt. 1, 435 (1974). \\[0pt] [3] R.A.H. Heinecke, ``Control of Relative Etch Rates of SiO2 and Si in Plasma Etching,'' Solid State Electronics 18, 1146 (1975). \\[0pt] [4] S.I.J. Ingrey, H.J. Nentwich, and R.G. Poulsen, ``Gaseous Plasma Etching of Al and Al2O3,'' USP 4,030,967 (filed 1976). [Preview Abstract] |
Tuesday, October 5, 2010 8:35PM - 9:00PM |
FT.00002: Ion Molecule Collision Processes in Gaseous Electronics Invited Speaker: The Introduction of the Flowing Afterglow in the 1960s revitalized Gaseous electronics by virtue of its unmatched versatility. The ion chemistry of the ionosphere was quickly determined. The first measurements of associative detachment of negative ions were made which had significance for aeronomy and Astrophysics. Meteorite metal ion reactions allowed the highest altitude determination of atmospheric water density. The first systematic studies of vibrationally excited molecular ions were carried out; Proof of the new process of collisional-radiative electron recombination was made the first application of Landau-Teller theory to molecular ions were carried out. FA technology was exrended to very high and very low temperatures. Application as an extremely sensitive analytical device for trace gas measurements is now widely used in environmental, industrial and medical applications. Vibrational radiative lifetimes were also measurements were made for molecular ions [Preview Abstract] |
Tuesday, October 5, 2010 9:00PM - 9:20PM |
FT.00003: Current Issues for next generation large area and high rate plasma process for thin film deposition Invited Speaker: It is well known that development of large area and high rate process is a prime technology for thin film deposition by plasma process for next generation industries including flat panel display, digital electronics, solar energy, automobile etc. The major hurdles for large area and high rate process development are film uniformity and structure control including damage which is closely associated with film properties respectively. The core topics for overcoming such hurdles can be classified as followings; \begin{itemize} \item New plasma sources for larger area film deposition \item Plasma -- nano process for precision control of film structure including damage \item Fundamental understanding of film nucleation and growth for design of film structure and plasma process \item Plasma chemistry of reactive process plasma by diagnostics etc. \end{itemize} A variety of technologies have been recently developed for large area and high rate processes with new plasma sources and process control with in-situ monitoring of radicals etc. The plasma sources can be reached to deposit films at the substrate larger than 2,000 mm x 2,000mm and the deposition rate keeps increasing to higher than 1 $\mu $m/min. The application is still limited, however, in industrial manufacturing lines with proof of quality. Especially the fundamental understanding on reactive plasma process is not well progressed, and should be overcome for innovation of next generation plasma technology. This paper is open for discussion on current status of large area and high rate plasma technology for thin film synthesis and provides agenda on scientific and technological issues for development of next generation larger and higher rate plasma processes. [Preview Abstract] |
Tuesday, October 5, 2010 9:20PM - 9:30PM |
FT.00004: Academic Roadmap of Plasma Process Technologies Invited Speaker: The Plasma Electronics Division of the Japan Society of Applied Physics published an academic roadmap of plasma process technologies in 2007 and revised it in 2009 [1]. We classify future devices into 3 kinds from the viewpoint of their fabrication processes. They are electronics in the near future, molecular-level devices in the future, and ultimate atomic-level devices. We describe briefly research subjects for realizing fabrication processes of such devices. The description is divided into three parts of top-down processes, bottom-up processes, and base technologies useful for both top-down and bottom-up processes. For Top-down processes, one important research subject is to find out methods to control generation of reactive species and spatial profile of their number density in plasmas of wide ranges of reactor size, pressure, and of various medium phases. Another is to control transport of each reactive species towards surfaces and its flux, kinetic energy. Such control may bring about selective irradiation of a single species of a well defined incident energy, atomic layer deposition and etching at a practical reaction rate, and manipulation of bio-molecules, and so on. For bottom-up processes, an important research subject is to realize defect-free self-organized growth at a high growth rate. We may establish well-defined self-organization by combining knowledge of bottom-up processes with that of top-down ones. Tow base technologies are diagnostics and simulation. We need non-intrusive, in-situ, high-speed diagnostics of multiple species, surface reactions on nano-structures. We also need high-speed multi-scale simulation with high accuracy as well as database of elementary reactions on surfaces and in gas. These future science and technologies will be integrated to realize ultimate top-down and bottom-up plasma processes. \\[4pt] [1] http://www.jsap.or.jp/english/aboutus/academic-roadmap.html [Preview Abstract] |
Tuesday, October 5, 2010 9:30PM - 10:00PM |
FT.00005: Discussion |
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