63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas
Volume 55, Number 7
Monday–Friday, October 4–8, 2010;
Paris, France
Session FT: Special Evening Session
8:00 PM–10:00 PM,
Tuesday, October 5, 2010
Room: 151
Chair: Makoto Sekine, Nagoya University
Abstract ID: BAPS.2010.GEC.FT.4
Abstract: FT.00004 : Academic Roadmap of Plasma Process Technologies
9:20 PM–9:30 PM
Preview Abstract
Abstract
Author:
Masaharu Shiratani
(Kyushu University)
The Plasma Electronics Division of the Japan Society of Applied
Physics
published an academic roadmap of plasma process technologies in
2007 and
revised it in 2009 [1]. We classify future devices into 3 kinds
from the
viewpoint of their fabrication processes. They are electronics in
the near
future, molecular-level devices in the future, and ultimate
atomic-level
devices. We describe briefly research subjects for realizing
fabrication
processes of such devices. The description is divided into three
parts of
top-down processes, bottom-up processes, and base technologies
useful for
both top-down and bottom-up processes. For Top-down processes,
one important
research subject is to find out methods to control generation of
reactive
species and spatial profile of their number density in plasmas of
wide
ranges of reactor size, pressure, and of various medium phases.
Another is
to control transport of each reactive species towards surfaces
and its flux,
kinetic energy. Such control may bring about selective
irradiation of a
single species of a well defined incident energy, atomic layer
deposition
and etching at a practical reaction rate, and manipulation of
bio-molecules,
and so on. For bottom-up processes, an important research subject
is to
realize defect-free self-organized growth at a high growth rate.
We may
establish well-defined self-organization by combining knowledge
of bottom-up
processes with that of top-down ones. Tow base technologies are
diagnostics
and simulation. We need non-intrusive, in-situ, high-speed
diagnostics of
multiple species, surface reactions on nano-structures. We also need
high-speed multi-scale simulation with high accuracy as well as
database of
elementary reactions on surfaces and in gas. These future science
and
technologies will be integrated to realize ultimate top-down and
bottom-up
plasma processes.
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[1] http://www.jsap.or.jp/english/aboutus/academic-roadmap.html
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2010.GEC.FT.4