Bulletin of the American Physical Society
63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas
Volume 55, Number 7
Monday–Friday, October 4–8, 2010; Paris, France
Session BT2: Plasma Surface Interactions I |
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Chair: Larry Overzet, University of Texas at Dallas Room: 151 |
Tuesday, October 5, 2010 8:30AM - 9:00AM |
BT2.00001: Nanotextured polymers by plasma etching: defining chemistry and topography for superior wetting and optics Invited Speaker: Plasma etching processes can be efficiently utilized for generating a tunable nano-scale texture onto polymer surfaces. This has been exploited in the present work in order to investigate the possibility of tailoring topography features to the right degree for reducing light reflectance, according to the moth eye effect, as well as for determining a transition from wet to non wet contact with water droplets. Results indicate that key parameters like input power, treatment time, kind of feed gas play a different role in defining scale and shape of nanostructures and can be accordingly tuned for the selected application. A transition of wetting regime can be also operated, once given the texture, with a fine variation of the outer chemical character. [Preview Abstract] |
Tuesday, October 5, 2010 9:00AM - 9:15AM |
BT2.00002: Study of the modifications induced by plasma VUV light on photoresist polymers for the development of plasma cure treatments Marc Fouchier, Erwine Pargon, Laurent Azarnouche, Olivier Luere, Kevin Menguelti, Gilles Cunge, Nader Sadeghi As the critical dimension of gate transistors scales down to the nm range, LineWidth Roughness (LWR) becomes a serious issue. The key to decrease the final LWR is to minimize photoresist (PR) LWR before plasma transfer. It was observed that Vacuum Ultra Violet (VUV) light emitted by plasmas leads to significant PR chemical modifications that result in LWR decrease and etch resistance improvement. In order to optimize such treatment, a better understanding of plasma VUV light/PR interactions is needed. For this purpose, we have investigated the optical emission of various plasma chemistries (HBr, Cl2, N2) and the PR absorption before and after treatment in the VUV range (200-100nm). Among all plasmas investigated, HBr shows the strongest emission due to atomic Br lines at 157.5 and 163.3nm. The emission increases with source power, and decreases with pressure and gas flow. This strong emission is well correlated to the chemical modifications observed in the PR. The absorption spectra before treatment show a strong absorption between 100 and 170nm, while after HBr plasma treatment, the presence of a new absorption peak near 195nm conveys the formation of carbon double bonds which may explain the improved etch resistance. [Preview Abstract] |
Tuesday, October 5, 2010 9:15AM - 9:30AM |
BT2.00003: In-line plasma cleaning of EUV multilayer mirrors Evdokim Malykhin, Oleg Braginsky, Alexander Kovalev, Dmitry Lopaev, Alexander Rakhimov, Tatyana Rakhimova, Anna Vasilieva, Sergey Zyryanov, Konstantin Koshelev, Vladimir Krivtsun, Oleg Yakushev Lifetime of multilayer mirrors (MLM) is one of the most important issues in EUV lithography. Carbonization and oxidation under EUV radiation is main reasons of MLM degradation. Methods developed for remote MLM cleaning such as cleaning by H atoms solve this problem partly. The most appropriate way is to create such conditions that MLM surface will remain clean during the lithographer operation time ($\sim $30000 hours). This work is devoted to studying the possibility of in-line MLM cleaning by EUV-induced plasma over the MLM surface. Experiments with low-pressure plasma jet of RF SWD and with 13.5 nm EUV-induced plasma were carried out. It was shown that H$_{3}^{+}$ and He$^{+}$ ions coming to MLM surface can provide enough cleaning rate to keep the surface clean without any observable degradation. [Preview Abstract] |
Tuesday, October 5, 2010 9:30AM - 9:45AM |
BT2.00004: Infrared spectroscopic study on oxidation of carbon for environmental solution Taka-aki Kawakami, Masanori Shinohara, Kojiro Hara, Yoshinobu Matsuda, Hiroshi Fujiyama, Yuki Nitta, Tatsuyuki Nakatani Environments have been in crisis for a long time after industrial revolution. One of the serious environmental problems is air pollution due to carbon particles generated in Diesel engines. The number of Diesel engine is increasing all around the world. The effective pyrolysis or detoxifying of carbon particle is required. One of the most effective methods is its oxidation. Plasma can realize at low temperature process. Understanding the detailed oxidation process leads to the developments of the effective pyrolysis method. Then, we investigate the oxidation process to find effective oxidation method. We prepare the several types of amorphous carbon films. The films were oxidized with oxygen molecules, oxygen radicals, and oxygen ions. The process was monitored with infrared spectroscopy in multiple internal reflection geometry (MIR-IRAS). To effectively insert oxygen into C-C bonds, the oxygen ions were required. [Preview Abstract] |
Tuesday, October 5, 2010 9:45AM - 10:00AM |
BT2.00005: Hydrogen/Argon Plasma-Amorphous Carbon Near-Surface Interactions N. Ning, D.B. Graves, N. Fox-Lyon, G.S. Oehrlein Interactions between low temperature, hydrogen-containing plasmas and a-C:H are complicated by the fact that the plasma generally strongly alters the near-surface region, and material from the surface will enter, and alter the plasma. In the present study, we report on the effects of H2- and Ar plasma-containing species on the near-surface region of an amorphous carbon film. H from the plasma will often insert into C-C bonds, creating hydrocarbon (HC) chains with varying degrees of cross-linking. HC has a lower density than C and so the near-surface region can expand and soften when exposed to H2-containing plasma. The depth and characteristics of the altered region depend on the composition and energy of the impinging species. Energetic positive ions can penetrate the surface, and fast, light H-containing ions are especially able to penetrate significant distances. The near-surface film structure and composition under steady state conditions is the result of a competition between erosion and insertion processes. A striking feature is the formation and ejection of HC clusters from the surface. These species can act as nuclei to form particles in the plasma. We report on the role of ion energy, composition and neutral-ion flux ratio on near-surface structure and composition and compare these predictions with the available experimental data. [Preview Abstract] |
Tuesday, October 5, 2010 10:00AM - 10:15AM |
BT2.00006: Studies of Asperity-Scale Plasma Discharge Phenomena Javan Albright, Laxminarayan Raja, Matthew Manley, K. Ravi-Chandar, Sikhanda Satapathy A combined experimental and computational simulation study of direct-current plasma discharge phenomena in small length-scale geometries ($<$10 $\mu $m) is described. The primary goal is to study discharge breakdown characteristics in small length scale geometries as quantified by a modified Paschen breakdown curve and the quench characteristics in these discharges. A modified mesoscale friction tester apparatus is used for the experiments. A self-consistent non-equilibrium plasma model is used for the simulation studies. The model includes field emission effects which is a key process in determining small length-scale breakdown behavior. The breakdown curves obtained from the experiment and simulation showed excellent agreement providing a measure of validation for the model. Quantification of the heat fluxes to the electrodes from the simulations shows significantly higher overall heat flux at the cathode surface compared to that at the anode surface, indicating asymmetry in the discharge. [Preview Abstract] |
Tuesday, October 5, 2010 10:15AM - 10:30AM |
BT2.00007: Plasma VUV intensity as a function of its electron energy distribution Lee Chen, Jianping Zhao, Ron Bravenec, Merritt Funk, Radha Sundararajan, Koji Koyama, Toshihisa Nozawa, Seji Samukawa Vacuum ultraviolet (VUV) dosage during processing is a contributing factor of various plasma induced wafer damages. The VUV intensity at a spatial point is a convoluted result of VUV self-absorption and VUV emitting-species concentration. VUV is monitored by measuring the VUV-induced electron-hole generated in the dielectric films of sensors developed by Samukawa\textit{ et} \textit{al} [B. Jinnai, S. Samukawa \textit{et} \textit{al}., J. Appl. Phys. \textbf{107}, 043302 (2010)]. Spatially resolved VUV measurements of plasmas under various pressures and local electron energy distribution functions (EED$f)$ have been conducted. To broaden the variety of the EED$f$, a radial line slot antenna (RLSA) and a flat inductive coil are alternatively used on the same experiment chamber, to excite microwave surface wave plasma ($\mu $SWP) and inductive RF plasma (ICP), respectively. Energetic electron population in the energy-range below the ionization is the primary source of the excitation of the VUV emitting states. The resulting VUV dosage could be minimized by controlling this energetic electron population of the plasma EED$f$. [Preview Abstract] |
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