61st Annual Gaseous Electronics Conference
Volume 53, Number 10
Monday–Friday, October 13–17, 2008;
Dallas, Texas
Session WF3: Computational Methods for Plasmas
10:00 AM–12:00 PM,
Friday, October 17, 2008
Room: Addison Room
Chair: J.P. Boeuf, LAPLACE, CNRS - University of Toulouse
Abstract ID: BAPS.2008.GEC.WF3.1
Abstract: WF3.00001 : Numerical Simulation on the Profile of Plasma and Radicals in Plasma Chambers
10:00 AM–10:30 AM
Preview Abstract
Abstract
Author:
Ikuo Sawada
(Tokyo Electron Limited)
With the dimensions of integrated circuit devices approaching less than 45nm
regime, the control of uniformity of plasma and radicals in etching chamber
becomes more and more important. In spite of many studies on the
capacitively coupled plasma, there had been no matured one which can predict
the plasma and radical profiles in a plasma chamber reasonably. Recently, I.
Lee et al. [1] proposed a new model to predict the non-uniformity of radial
power deposition caused by electromagnetic effects such as standing wave and
skin effects. Y. Yang et al. [2] has proposed a coupled solution method
between plasma fluid eqs. and Maxwell eqs. to consider both EM and
electrostatic effects. In this report, we present some results on our
methodology-mix to predict the profile of plasma and radicals comparing with
the measured data.
The non-uniformity of plasma and radicals are governed by many process and
tool parameters like as pressure, gas species, gas flow-rate, frequency and
power of RF, configuration of electrodes and wall, solid materials
surrounding plasma and so on. From a physical standpoint of view, these
parameters change the impedances of plasma or boundary materials and affect
some non-linear phenomena among plasma, sheath and boundary materials.
Considering these aspects, we developed a several kind of models and
methods. One of them is the introduction of a new dimensionless parameter to
predict the uniformity of plasma. One of the other is the hybrid method to
predict the plasma and radicals profiles by using the two-dimensional
numerical simulation models described above. Based on the chemical reaction
database either developed by ourselves or obtained in the published papers,
we've calculated the profiles of plasma and radicals and compared the
calculated electron density profile with the measured one in a
mass-production chamber in case of some gases to confirm the good accuracy
of the calculation.
[1] I. Lee et al. : Plasma Sources Sci. Technol. (17) 2008, p16 [2] Y.Yang
et al. : Proceeding of IITC 2008
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2008.GEC.WF3.1