61st Annual Gaseous Electronics Conference
Volume 53, Number 10
Monday–Friday, October 13–17, 2008;
Dallas, Texas
Session PR1: Fluorocarbon Plasmas I
8:00 AM–9:30 AM,
Thursday, October 16, 2008
Room: Salon E
Chair: Truell Hyde, Baylor University
Abstract ID: BAPS.2008.GEC.PR1.1
Abstract: PR1.00001 : Study of the ion induced etching for Si and SiO2 with F+ and CFX(X=1,2,3)+ ions
8:00 AM–8:30 AM
Preview Abstract
Abstract
Author:
Kazuhiro Karahashi
(Osaka University)
Dry etching with reactive plasma has been widely used in the
fabrication of
semiconductors. For the development of integrated semiconductor
devices,
more precise control of the etching process is required for further
progress. It is known that reactive ion species and reactive neutral
species, which are produced in plasma, play a great role in etching
reactions. However, the mechanism for the etching reaction has
not yet been
quantitatively described because the individual reactive species
cannot be
controlled independently in the conventional etching apparatus.
It is
necessary to clarify the roles of individual reactive ion
bombardments and
neutral species. A beam experimental method is a very useful tool
for
investigating the interactions of individual species with
surfaces. Thus, we
developed a mass-analyzed low-energy ion beam system for
investigating the
interaction of reactive ion with surfaces. It irradiates analyzed
single-species ions onto sample surfaces. The irradiation chamber
was
maintained in the ultrahigh vacuum condition throughout our
experiments. The
system has neutral beam sources that independently irradiate a
neutral
species onto the sample surface. The system can simulate an
etching reaction
in a plasma environment. To investigate surface reactions for
etching
processes, we have determined the etching yields by incident ion,
detected
the scattering species and desorbed products with a
differentially pumped
rotatable quadrupole mass spectrometer (QMS), and measured surface
modification during ion irradiation by X-ray photoelectron
spectroscopy. The
QMS provided time-resolved measurements and could be synchronized
with
pulsed ion beam.
In the present work, we have investigated etching yields and time
of flight
distribution and angular distribution of desorption products for
Si or SiO2
by F+ and CF+ (x = 1-3) ion bombardments which are considered to
be the main
ion species in fluorocarbon plasmas. These results clearly show
that the
etching reaction on SiO2 differs from that on Si surface.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2008.GEC.PR1.1