Bulletin of the American Physical Society
61st Annual Gaseous Electronics Conference
Volume 53, Number 10
Monday–Friday, October 13–17, 2008; Dallas, Texas
Session FTP1: Poster Session I (19:00-21:30)
7:00 PM,
Tuesday, October 14, 2008
Room: Salon F-J
Chair: I. Langmuir
Abstract ID: BAPS.2008.GEC.FTP1.12
Abstract: FTP1.00012 : Remote Plasma Assisted, Low-Temperature SiO$_{2}$ growth on SiC for MOS Device Applications
Preview Abstract Abstract
Authors:
J.M. Williamson
(Innovative Scientific Solutions, Inc., Dayton, OH 45440)
B.A. Tolson
(Innovative Scientific Solutions, Inc., Dayton, OH 45440)
S.F. Adams
(Air Force Research Laboratory, Wright-Patterson AFB, OH 45433)
J.D. Scofield
(Air Force Research Laboratory, Wright-Patterson AFB, OH 45433)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2008.GEC.FTP1.12
Follow Us |
Engage
Become an APS Member |
My APS
Renew Membership |
Information for |
About APSThe American Physical Society (APS) is a non-profit membership organization working to advance the knowledge of physics. |
© 2024 American Physical Society
| All rights reserved | Terms of Use
| Contact Us
Headquarters
1 Physics Ellipse, College Park, MD 20740-3844
(301) 209-3200
Editorial Office
100 Motor Pkwy, Suite 110, Hauppauge, NY 11788
(631) 591-4000
Office of Public Affairs
529 14th St NW, Suite 1050, Washington, D.C. 20045-2001
(202) 662-8700