Bulletin of the American Physical Society
61st Annual Gaseous Electronics Conference
Volume 53, Number 10
Monday–Friday, October 13–17, 2008; Dallas, Texas
Session DT1: Plasma-Surface Interactions
1:30 PM–3:30 PM,
Tuesday, October 14, 2008
Room: Salon E
Chair: CW Chung, Hanyang University, Korea
Abstract ID: BAPS.2008.GEC.DT1.5
Abstract: DT1.00005 : Surface loss rate of H and N radicals in H$_{2}$/N$_{2}$ plasma etching process
2:45 PM–3:00 PM
Preview Abstract Abstract
Authors:
Chang Sung Moon
Keigo Takeda
Toshio Hayashi
(Nagoya University)
Seigo Takashima
(Nagoya Urban Industries Promotion Corp.)
Makoto Sekine
(Nagoya Univ. and JST-CREST)
Yuichi Setsuhara
(Osaka Univ. and JST-CREST)
Masaharu Shiratani
(Kyushu Univ. and JST-CREST)
Masaru Hori
(Nagoya Univ. and JST-CREST)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2008.GEC.DT1.5
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