Bulletin of the American Physical Society
61st Annual Gaseous Electronics Conference
Volume 53, Number 10
Monday–Friday, October 13–17, 2008; Dallas, Texas
Session DT1: Plasma-Surface Interactions
1:30 PM–3:30 PM,
Tuesday, October 14, 2008
Room: Salon E
Chair: CW Chung, Hanyang University, Korea
Abstract ID: BAPS.2008.GEC.DT1.3
Abstract: DT1.00003 : Atomic-scale cellular model and profile simulation of Si etching in chlorine- and bromine-containing plasmas: Effects of surface oxidation on evolution of feature profiles
2:15 PM–2:30 PM
Preview Abstract Abstract
Authors:
Hirotaka Tsuda
Shoki Irie
Masahito Mori
Hiroaki Ohta
Koji Eriguchi
Kouichi Ono
(Kyoto University)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2008.GEC.DT1.3
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