Session FTP1: Poster Session I (19:00-21:30)
7:00 PM–7:00 PM, Tuesday, October 14, 2008
Room: Salon F-J
Chair: I. Langmuir
Abstract ID: BAPS.2008.GEC.FTP1.17
Abstract: FTP1.00017 : Meter-Scale Microwave Plasma Production and its Application to Silicon Thin Film Deposition
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Abstract 
Authors:
Hirotaka Toyoda
(Nagoya University)
Yudai Takanishi
(Nagoya University)
Hirotaka Endo
(Nagoya University)
Tatsuo Ishijima
(Nagoya UNiversity)
There has been a great need for meter-scale plasma sources for giant materials processing, such as thin film transistor manufacturing for meter-size liquid crystal display (LCD), deposition of silicon thin films for photovoltaic power generation and so on. Recently, we have developed a new technology for production of surface wave excitation [1]. In this paper, we demonstrate production of meter-scale large-area plasma with multiple waveguide lines. In the experiment, microwave power ($<$30 kW) is coupled to the plasma through power divider, multiple waveguide lines and slot antennas. Optical and Langmuir probe measurements of Ar/H$_{2}$ plasma show production of very uniform plasma at a plasma density of 3.4 x 10$^{11}$ cm$^{-3}$ and a variance of 2{\%} within an area of 0.9 m x 0.9 m. With use of carefully-designed gas manifold, microcrystalline silicon films are deposited on sample substrates. Deposition rate of $\sim $0.3 nm/s with a variance of less than 10 {\%} is obtained within an area of 0.6 m x 0.7 m. Uniformity of film quality such as film crystallinity is also confirmed. \textbf{[}1] H. Sugai, Y. Nojiri, T. Ishijima and H. Toyoda, 6$^{th}$ Int. Conf. on Reactive Plasmas and 23$^{rd}$ Symp. on Plasma Processing, (Matsushima, 2006), p.17.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2008.GEC.FTP1.17