Session FTP1: Poster Session I (19:00-21:30)
7:00 PM–7:00 PM, Tuesday, October 14, 2008
Room: Salon F-J
Chair: I. Langmuir
Abstract ID: BAPS.2008.GEC.FTP1.12
Abstract: FTP1.00012 : Remote Plasma Assisted, Low-Temperature SiO$_{2}$ growth on SiC for MOS Device Applications
Preview Abstract
MathJax On | Off 
Abstract 
Authors:
J.M. Williamson
(Innovative Scientific Solutions, Inc., Dayton, OH 45440)
B.A. Tolson
(Innovative Scientific Solutions, Inc., Dayton, OH 45440)
S.F. Adams
(Air Force Research Laboratory, Wright-Patterson AFB, OH 45433)
J.D. Scofield
(Air Force Research Laboratory, Wright-Patterson AFB, OH 45433)
SiC is an attractive material for semiconductor device applications in environments too harsh for normal Si-based semiconductors. It has high thermal conductivity and breakdown electric field strength enabling high power and temperature operation. SiO$_{2}$ is readily grown on SiC by high-temperature ($\sim $1200\r{ }C) thermal oxidation, but defect densities in the SiO$_{2}$/SiC interface limits device performance. Plasma-assisted oxidation of SiC is being investigated as a low-temperature alternative to thermal SiC oxidation to produce MOS devices with lower defect densities. SiC wafers were oxidized with a remote microwave plasma in an O$_{2}$ / Ar gas mixture at temperatures much lower than thermal oxidation. Recent results of the plasma assisted oxide growth process have shown significant improvement, with SiO$_{2}$ layers in excess of 600 {\AA} at growth temperatures near 300\r{ }C. Results will be presented of the plasma assisted SiC oxidation including plasma optical diagnostics and oxide layer characterization.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2008.GEC.FTP1.12