Session DT1: Materials Processing in Low Pressure Plasmas I: Etching, deposition, new materials

Show
Abstracts
Chair: Shahid Rauf, Applied Materials
Doubletree Crystal City - Crystal Ballroom A


Tuesday, October 2, 2007
1:30PM - 2:00PM

DT1.00001: A new generation of cryogenic processes for silicon deep etching
Invited Speaker: Remi Dussart

Preview Abstract
Tuesday, October 2, 2007
2:00PM - 2:15PM

DT1.00002: Student Excellence Award Finalist: Modeling of Deep Reactive Ion Etching of Si under plasma molding in 2f-CCP in SF$_6$/O$_2$
Fukutaro Hamaoka , Takashi Yagisawa , Toshiaki Makabe

Preview Abstract
Tuesday, October 2, 2007
2:15PM - 2:30PM

DT1.00003: Student Excellence Award Finalist: Neutral production in SF$_6$/SiCl$_4$ inductively coupled plasmas
C. Duluard , R. Dussart , L.E. Pichon , E.H. Oubensaid , P. Lefaucheux , P. Ranson , M. Puech

Preview Abstract
Tuesday, October 2, 2007
2:30PM - 2:45PM

DT1.00004: Atomic-scale model analysis of the feature profile evolution during Si etching in chlorine- and bromine-containing plasmas
Shoki Irie , Yugo Osano , Masahito Mori , Koji Eriguchi , Kouichi Ono

Preview Abstract
Tuesday, October 2, 2007
2:45PM - 3:00PM

DT1.00005: Effect of VUV Radiation on Fluorination of Polypropylene in Low Pressure Plasmas
Yang Yang , Mark Strobel , Seth Kirk , Mark J. Kushner

Preview Abstract
Tuesday, October 2, 2007
3:00PM - 3:15PM

DT1.00006: Effect of gas mixture ratio on atomic oxygen density in an inductively coupled plasma in O$_{2}$/Ar mixture
Toshikazu Sato , Toshiaki Makabe

Preview Abstract
Tuesday, October 2, 2007
3:15PM - 3:30PM

DT1.00007: Student Excellence Award Finalist: Ion Flux and Energy Measurement at a Pulsed Biased Electrode in a C$_{2}$H$_{2}$:Argon Inductively Coupled Plasma During DLC Growth.
A. Baby , C.M.O. Mahony , P.D. Maguire

Preview Abstract