Thursday, October 20, 2005
8:00AM - 8:15AM
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UH1.00001: Profile simulation of high-aspect-ratio contact etching including charging effect
Seokhyun Lim
, Yongjin Kim
, Yero Lee
, Taikyung Kim
, Gyung-Jin Min
, Chang-Jin Kang
, HanKu Cho
, Joo-Tae Moon
Preview Abstract |
Thursday, October 20, 2005
8:15AM - 8:30AM
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UH1.00002: A self-consistent modeling of feature profile evolution under competition between etching and deposition
Takashi Shimada
, Takashi Yagisawa
, Toshiaki Makabe
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Thursday, October 20, 2005
8:30AM - 8:45AM
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UH1.00003: Development of Nano-Contact Etch Process Using New Gas Chemistry.
Jong-Woo Sun
, Chul-Ho Shin
, Gyung-Jin Min
, Chang-Jin Kang
, HanKu Cho
, Joo-Tae Moon
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Thursday, October 20, 2005
8:45AM - 9:00AM
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UH1.00004: Etching of high-$k$ and metal gate materials in high-density chlorine-containing plasmas
Kouichi Ono
, Keisuke Nakamura
, Kazushi Osari
, Tomohiko Kitagawa
, Kazuo Takahashi
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Thursday, October 20, 2005
9:00AM - 9:15AM
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UH1.00005: SiO$_{2}$ and Si$_{3}$N$_{4}$ Etch Mechanisms in NF$_{3}$/C$_{2}$H$_{4}$ Plasma
Puthajat Machima
, Noah Hershkowitz
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Thursday, October 20, 2005
9:15AM - 9:30AM
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UH1.00006: Performance Tunable High-Frequency Inductively Coupled Plasma Technology in Application to Polysilicon Etcher and High Density Plasma CVD
Jong W. Shon
, GiChung Kwon
, Hong Y. Chang
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