Bulletin of the American Physical Society
2005 58th Gaseous Electronics Conference
Sunday–Thursday, October 16–20, 2005; San Jose, California
Session VH1: Plasma Diagnostics II |
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Chair: Nick Braithwaite, Open University, UK Room: Doubletree Hotel Pine |
Thursday, October 20, 2005 10:00AM - 10:15AM |
VH1.00001: Diagnostics of Oxygen Atoms in Surface Wave Plasma with Vacuum Ultraviolet Laser Absorption Spectroscopy Keigo Takeda, Yoshiki Kubota, Anna Serdyuchenko, Seigo Takashima, Masaru Hori Oxygen plasmas have been frequently used for oxidation process of materials, chamber cleaning, etc. In the case of the fabrication of ultra-thin dielectric films such as a gate oxide film, the surface wave excited oxygen plasmas diluted by rare gases was especially focused on realizing a higher oxidation rate and lower leakage current than the conventional plasma oxidation process. However, the detailed knowledge of mechanism of the plasma oxidation process is not obtained due to few powerful measurement techniques of oxygen atoms which are most important in plasma oxidation process. Therefore, in this study, we have carried out the measurement of the absolute oxygen atom density in the Kr dilution surface wave excited oxygen plasma using tunable vacuum ultraviolet laser absorption spectroscopy with the resonance lines of ground state and that of excited state. The densities were evaluated as a function of Kr dilution ratio. The excited oxygen atom density increased with the increase of Kr dilution ratio and had a peak at the high dilution ratio of 97 {\%}. The behaviors of ground state oxygen atoms in the surface wave excited oxygen and Kr mixture plasma were also evaluated. [Preview Abstract] |
Thursday, October 20, 2005 10:15AM - 10:30AM |
VH1.00002: Detection of N$_{2}$(A$^{3}\Sigma ^{+}_{u})$ metastable in DBD discharge by OODR-LIF spectroscopy Santolo De Benedictis, Paolo Francesco Ambrico, Giorgio Dilecce, Milan Simek The N$_{2}$(A$^{3}\Sigma ^{+}_{u})$ metastable has been detected for first time in dielectric barrier discharge at atmospheric pressure in N$_{2}$ and N$_{2}$-O$_{2}$ gas mixtures by Optical-Optical Double Resonance --Laser Induced Fluorescence spectroscopy (OODR-LIF). The DBD discharge occurs over a thin ceramic plate on which one metallic electrode comb structured is deposited. The second electrode is a full deposit on the back of the plate external to the chamber. The N$_{2}$(A) OODR-LIF detection takes place by one laser photon tuned on the (3,0) band of N$_ {2}$(FPS) and a second one on the (2,3) band of N$_{2}$(SPS) as described in previous papers[1]. The fluorescence signal of (2,1) band of SPS is measured. The measurement is time resolved in the radiofrequency cycle (11KHz) of applied voltage and space resolved in the discharge gap. N$_{2}$(A) metastable LIF signal varies in the voltage cycle as well as with the distance (1 - 5 mm) above the surface of comb electrode. It is significantly quenched as a few percentage of O$_{2}$ is added to N$_{2}$. [1] G. Dilecce, P.F. Ambrico, S. De Benedictis, PSST (on line July 2005) [Preview Abstract] |
Thursday, October 20, 2005 10:30AM - 10:45AM |
VH1.00003: Development of ultracompact absolute density measurement system for atomic radicals and simultaneous measurement technique of H, N, O radicals employing the system Seigo Takashima, Hiroyuki Kano, Masaru Hori Atomic radicals such as hydrogen (H), Nitrogen (N), and oxygen (O) play important roles in reactive process plasmas. In previous study, we have developed a measurement system of absolute densities of H, N, O atoms in process plasmas employing the vacuum ultraviolet absorption spectroscopy (VUVAS) with an atmospheric pressure microdischarge hollow cathode lamp (MHCL). Using this system, the measurements of absolute densities have been carried out and hereby the behaviors of these atomic radicals in various process plasmas have been clarified. However, in this system, when the measurements were carried out in the high density plasmas, the pipes of about 30 mm in diameter had to be introduced into the plasma in order to prevent the saturation of the absorption intensity. Moreover, three atomic radicals were not able to be measured simultaneously. In this study, we have developed the ultracompact measurement system of mm size and simultaneous measurement technique of H, N, O atoms. [Preview Abstract] |
Thursday, October 20, 2005 10:45AM - 11:00AM |
VH1.00004: Multipurpose temperature gradient probe: operation and applications Pavlo Rutkevych, Kostya Ostrikov, JiDong Long, ShuYan Xu Development and applications of a versatile temperature gradient probe (TGP) for advanced in situ plasma diagnostics are reported. The probe is made of three stainless steel-shielded thermocouples. Hardware and software compensations provide stable and reproducible temperature readings even in high-power RF discharges. In addition to TG measurements, the metallic shields are used as cylindrical Langmuir probes (LPs), and provide valuable information about ion and electron densities and ion temperature by using the Laframboise model of ion collection. Independent estimation of plasma potential and thermo-emission current is made through direct temperature readings. This high-efficiency and low-cost hybrid TG/LP in situ diagnostics has been used to map the species distribution in Ar+H2+CH4 inductively coupled plasmas used for plasma enhanced chemical vapour deposition of ordered carbon microemitter arrays. In particular, the TGP diagnostics confirms that the quality of microemitter structures can be managed by thermophoretically manipulating plasma-grown nanoparticles in the near-substrate areas. [Preview Abstract] |
Thursday, October 20, 2005 11:00AM - 11:15AM |
VH1.00005: Monitoring Ion Energy at a Wafer Surface During Plasma Etching Mark Sobolewski A better understanding and control of plasma etching could be obtained if the energy distributions of ions striking the wafer surface were known. Unfortunately, directly measuring ion energies at a wafer surface during etching is difficult or impossible. Ion energies can be indirectly monitored, however, by measuring the rf voltage and current applied to a plasma reactor and analyzing these measurements with sheath models. This approach has previously been validated\footnote{M. A. Sobolewski, J. Appl. Phys. \textbf{95}, 4593 (2004).} and used to monitor ion energy drift\footnote{M. A. Sobolewski, J. Appl. Phys. \textbf{97}, 033301 (2005).} at a bare metallic electrode. When a wafer is present, however, it contributes an electrical impedance which may cause errors in the monitoring technique. In this study experiments were performed to characterize the wafer impedance and its effect on the monitoring technique, for oxidized and bare Si wafers being etched by Ar/CF$_{4}$ plasmas in an inductively coupled plasma reactor. Wafer impedance was found to be significant at low bias frequencies but negligible at high bias frequencies (10 MHz). At 10 MHz, the technique was able to accurately monitor ion energy during a normal etch process and during simulated equipment faults. [Preview Abstract] |
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