Bulletin of the American Physical Society
2005 58th Gaseous Electronics Conference
Sunday–Thursday, October 16–20, 2005; San Jose, California
Session BM2: Magnetically-enhanced Plasmas |
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Chair: A.Kono, Nagoya University Room: Doubletree Hotel Cedar |
Monday, October 17, 2005 8:00AM - 8:15AM |
BM2.00001: Experimental and Theoretical Investigation of Dual Frequency Magnetically Enhanced Reactive Ion Etch Plasmas Alex Paterson, Theodoros Panagopoulos, Valentin Todorow, Sharma Pamarthy, Declan Scanlan, Thorsten Lill, John Holland Dual Frequency Magnetically Enhanced Reactive Ion Etch tools (DF-MERIE) are the technology of choice for the etching of deep silicon trenches, which are required for the capacitor structures of DRAM cells. This presentation will focus on the characterization of a DF-MERIE, both experimental and theoretical, where the low and high frequencies are applied to the same wafer platen. Investigations suggest that the magnetic field produces many novel attributes to this type of etch that can not be obtained otherwise. Wafer voltage and DC bias measurements show that as the B-field increases above a certain value, dependent on frequency, the wafer voltage and DC bias decrease rapidly, becoming less negative. Inspection of the RF waveform shows that the cathodic part of the RF cycle reduces dramatically but the anodic part of the cycle increases. This suggests that sheath reversal is taking place to compensate for the electron inertia produced by the B-field, as proposed by [1].\newline \newline [1] M. Kushner, J. Appl. Phys. 94/3 (2003), 1436 [Preview Abstract] |
Monday, October 17, 2005 8:15AM - 8:30AM |
BM2.00002: A self-consistent modeling of an RF magnetron plasma with metallic and dielectric target for sputtering Takashi Yagisawa, Shunji Kuroiwa, Toshiaki Makabe Radio frequency (RF) magnetron plasma has been developed as a promising candidate for various kinds of material processing. Magnetron-RIE is traditionally operated as an etching tool of dielectric (high-k) materials in industry. In addition, dielectric thin film prepared by RF magnetron plasma is widely used as a reflective layer for optical disks, such as CD DVD, Blue-ray disk and super-RENS disk. Deposition uniformity on a substrate is to a great extent influenced by the target erosion profile. There exist two major differences in erosion profile between a metallic target and a dielectric one. One is the presence of double minima in the erosion profile. The other is the discrepancy in the radial position between the maximum of the ion flux and the erosion depth. These are caused by a distinctive sheath profile in front of a dielectric target based on the surface charging. In this paper, we will focus on the 2D-t structure of an RF magnetron plasma with dielectric target at 5 mTorr in Ar. Emphasis will be given on the causation between the profile of the sheath potential and the ion velocity distribution incident on the target surface. [Preview Abstract] |
Monday, October 17, 2005 8:30AM - 8:45AM |
BM2.00003: LIF Measurement of Time-Dependent Spatial Density Distribution of Cu Atoms Ejected from a YBaCuO Target in Magnetron~Sputtering Plasmas Junsi Gao, Nayan Nafarizal, Koichi Sasaki, Hirotaka Toyoda, Masumi Inoue, Akira Fujimaki, Satoshi Iwata, Hideo Sugai Magnetron sputtering deposition techniques have a great potential in high quality high T$_{c}$ superconductor film. We used a two- dimensional laser-induced fluorescence method to measure the time-dependent spatial density distribution of Cu atoms ejected from a YBaCuO target in RF-magnetron sputtering plasma. It has been first found that the sputtered Cu density was changed with both time and discharge conditions. This was different from the case of Cu metal target, where the Cu density depends only on discharge conditions. Therefore, the time-dependent spatial distribution of Cu density was investigated systematically in various discharge conditions. At low gas pressure, the density was increased at the beginning of discharge, then decreased, and finally reached a stationary value within a few minutes. The differences between initial value and stationary value were about two times. However, at high gas pressure, the stationary density was decreased to one-fifth of the initial value, and the transition time became 16 min. These observations are crucial for optimizing the deposition conditions of high T$_{c}$ superconductor film. [Preview Abstract] |
Monday, October 17, 2005 8:45AM - 9:00AM |
BM2.00004: Time-Resolved Imaging of a Pulsed DC Magnetron Plasma During the Sputter Deposition of TiO$_{2}$ Films Abe Belkind, Kurt Becker, Jose Lopez, Shanmugamurthy Shanmugamurthy Time resolved images from a pulsed DC titanium target magnetron plasma were taken with a Roper Scientific ICCD camera. The camera was exposed to the discharge for 0.05-0.2 $\mu $s with 0.05-0.2 $\mu $s separation between each exposure. At the beginning of the \textit{on-time} when the power is turned on, the discharge initially starts preferentially in the cross corners of the \textit{race track}. During the rest of the \textit{on-time}, the emission from the straight sections of the \textit{race track} of the magnetron is always slightly stronger than the emission from the two rounded corners of the \textit{race track}. This pattern extends into the start of the \textit{off-time} when the power is turned off.~The optical emissions persist for several microseconds into the \textit{off-time}.~Spectral filters were used in order to record the temporal behavior of the emissions from various species (Ar, O). The observed ``corner effect'' at the beginning of the \textit{on time }was modeled using a Monte Carlo method by retracing the high energy electrons. Work supported by the U.S. National Science Foundation and the U.S. Army. [Preview Abstract] |
Monday, October 17, 2005 9:00AM - 9:30AM |
BM2.00005: Magnetically Enhanced Multiple Frequency Capacitively Coupled Plasmas: Dynamics and Strategies Invited Speaker: The desire to independently control the magnitude and energy of ion fluxes to wafers during plasma materials processing has motivated development of a variety of plasma tools, from inductively coupled with a separate bias to the increasingly popular dual frequency capacitively coupled plasmas (CCPs). The success of these strategies has in part been due to, for example, CCPs being able to produce more favorable radical fluxes to achieve selectivity compared to ICPs. At the same time, there is a resurgence in the use of magnetically enhanced CCPs which also have an ability to control the shape of ion energy and angular distributions by radically changing the structure of the sheath. For example, a static magnetic field of sufficient magnitude applied parallel to the sheath results in ions being more mobile than electrons; and a reversal of the electric field in the sheath.[1] The combination of dual (or multiple) frequency CCPs and magnetic enhancement provides additional parameters with which to control reactive fluxes to the substrate. Using results from a 2-dimensional plasma equipment model, the dynamics of magnetically enhanced, multiple frequency CCPs will be discussed. Strategies to use their unique properties will be proposed. \newline [1] M. J. Kushner, J. Appl. Phys. J. Appl. Phys. \textbf{94}, 1436 (2003) [Preview Abstract] |
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