Session UH1: Etching Mechanisms
8:00 AM–9:30 AM, Thursday, October 20, 2005
Doubletree Hotel Room: Pine
Chair: Eric Hudson, LAM Research
Abstract ID: BAPS.2005.GEC.UH1.2
Abstract: UH1.00002 : A self-consistent modeling of feature profile evolution under competition between etching and deposition
8:15 AM–8:30 AM
Preview Abstract
MathJax On | Off 
Abstract 
Authors:
Takashi Shimada
Takashi Yagisawa
Toshiaki Makabe
(Keio University)
Radical deposition is one of the important issues for SiO$_2$ etching as the radicals contribute to the protection of side wall as well as the acceleration of etching by the formation of a mixing layer on the bottom. We investigate the relationship among local wall charging, etching and deposition in a SiO$_2$ trench etching, by considering the transport of electrons, positive ions, and neutral radicals in the two-dimensional sheath structure in a two frequency-capacitively coupled plasma in CF$_4$/Ar. Emphasis is given on the influence of both charging and neutral radical accumulation inside the SiO$_2$ trench during plasma etching. Feature profiles of the SiO$_2$ trench are estimated by the Level Set method under conditions with/without charging and neutral deposition. In particular, the effect of the bias amplitude on the profile evolution is discussed under the competition between etching and deposition.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2005.GEC.UH1.2