2019 Annual Meeting of the APS Far West Section
Volume 64, Number 17
Friday–Saturday, November 1–2, 2019;
Stanford, California
Session B02: Poster Session - Condensed Matter and Material Sciences
9:45 AM,
Friday, November 1, 2019
Huang Engineering Center
Room: Foyer
Chair: Hendrik Ohldag, Lawrence Berkeley National Laboratory
Abstract: B02.00005 : Electrical Current Characteristics of Simulated Carbon Nanotube Network Field Effect Transistors*
Preview Abstract
Abstract
Authors:
James Raj
(California Polytechnic State University)
Roberto Valenzuela
(University of California, Santa Barbara)
Colleen Marlow
(California Polytechnic State University)
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Carbon nanotube (CNT) network field effect transistors (FETs) offer a
promising method for creating biosensors. Sensing occurs due to
electrostatic gating which impacts the metallic-semiconducting (m-s)
junctions in particular, and is heavily influenced by the morphology of the
CNT network. Using a simulated random stick network, we assigned sticks to
be either metallic (m) or semiconducting (s) with ratios and densities
similar to actual devices and simulated electrostatic gating at each m-s
junction in the network. For biosensing applications CNT FETs should have
optimized sensitivity. However, it is not fully understood how a network's
morphological parameters impact its overall network sensitivity. Using our
simulation, we mapped sensitivity as the impact of gating each m-s junction
within the network to the overall change in network current. This process
was done for multiple simulated networks of varying tube densities. Our
results showed that not all m-s junctions influence the network the same,
and allowed us to determine which m-s junctions act. In addition, we
verified that m-s junctions most influence the network response when the
networks are of low density affirming that sparse networks have higher
sensitivity.
*This project was supported by the William and Linda Frost Fund. James Raj was a recipient of the Frost Undergraduate Summer Research Award.