Bulletin of the American Physical Society
51st Annual Meeting of the APS Division of Atomic, Molecular and Optical Physics
Volume 65, Number 4
Monday–Friday, June 1–5, 2020; Portland, Oregon
Session C09: Defect qubits in solidsInvited Live
|
Hide Abstracts |
Sponsoring Units: DCMP DQI Chair: Cindy Regal, JILA Room: Portland 256 |
Tuesday, June 2, 2020 10:30AM - 11:00AM Live |
C09.00001: Controlling spin-photon interfaces and nuclear spin registers in color centers Invited Speaker: Sophia Economou Color centers in solids are being developed as a central components of quantum communication networks. The centers studied for this application, such as the NV center in diamond, are optically active, provide spin-photon interfaces, and feature modest-sized nuclear spin registers that can be controlled through the electronic spin. Despite the enormous progress in both spin-photon entanglement and nuclear spin control, further improvements are needed for realistic applications. I will present our theoretical work toward this direction, focusing on the generation of multi-photon graph states and the control of nuclear spins through dynamical decoupling sequences. [Preview Abstract] |
Tuesday, June 2, 2020 11:00AM - 11:30AM Live |
C09.00002: Telecom spin-photon interfaces in silicon Invited Speaker: Stephanie Simmons To build a silicon-based global quantum network it would be advantageous to efficiently link silicon’s famously long-lived spin qubits directly to photons in the telecommunications bands. A class of light-emitting centres in group IV semiconductors called radiation damage centres are promising candidates towards this goal. A few notable radiation damage centres in diamond, silicon, and silicon carbide have been studied extensively. While some of the centres in silicon are known to emit light in the telecommunications bands, there has been little work to determine if any support long-lived spin qubits or potential spin/photon conversion possibilities. We have found the photoluminescence of many of these centres is much sharper in silicon-28 than natural silicon, often by over two orders of magnitude, and in some instances indicate near transform-limited luminescence in the bulk. [1] We will report on recent developments studying these centres for applications as spin qubits in isotopically purified silicon-28. We have identified long-lived spins, both electron and nuclear, connected with relatively efficient telecommunication band spin-dependent photon emission. We also report significantly sharper linewidths allowing us to resolve fine structure in several centres. Lastly, we will discuss the prospects and progress towards integrating these centres in silicon-on-insulator integrated photonic circuits. \\ \\ [1] [26] C. Chartrand, L. Bergeron, K.J. Morse, H. Riemann, N.V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M.L.W. Thewalt. Highly enriched 28Si reveals remarkable optical linewidths and fine structure for well-known damage centers. PRB 98:195201 (2018). [Preview Abstract] |
Tuesday, June 2, 2020 11:30AM - 12:00PM Live |
C09.00003: Predicting and Controlling the Electronic, Spin and Lattice Degrees of Freedom of Artificial Atoms in Solids Invited Speaker: Prineha Narang Recent work has focused on identifying new defect qubits in 3D and 2D materials with quantum optoelectronic properties that reach beyond the limitations of the well-known nitrogen-vacancy (NV-) center in diamond. Group IV-vacancy centers in diamond have been of particular interest due to their symmetry-protected optical transitions and long-lived spin degree of freedom. In the first part of my talk I will discuss the ground- and excited-state properties of group IV centers in their negative and neutral charge state with a focus on the dynamic and product Jahn-Teller (pJT) effects, including their impact on zero phonon line energetics, spin-orbit coupling and lattice dynamics. From first principles, I will show how we capture the interplay of spin-orbit and electron-phonon coupling in order to accurately describe the pJT-affected excited state manifold, going beyond a perturbative description. In the second part of my talk I will present our recent work on color centers in low dimensional materials in particular the impact of localized strain and strong-spin orbit coupling. I will conclude with discussing schemes for selective control of optically active qubits of differing excitation energies towards creating components for quantum networks. [Preview Abstract] |
Tuesday, June 2, 2020 12:00PM - 12:30PM On Demand |
C09.00004: Coupling diamond defect centers to Fabry-Perot microcavities Invited Speaker: Lilian Childress The long-lived, optically accessible spin states of defect centers in diamond provide a promising platform for quantum network applications, with entanglement distribution between distant nitrogen-vacancy defects already demonstrated. By integrating defect centers into optical resonators, more efficient or even deterministic protocols could be possible. While systems based on diamond nanophotonics have been pursued for more than a decade, Fabry-Perot microcavities present a complementary approach that may be better suited to nitrogen-vacancy centers. This talk will give an overview of the potential benefits and challenges to this approach, examine progress over the last few years, highlight recent results demonstrating coupling of germanium-vacancy defect centers in a diamond membrane to a high finesse microcavity at room temperature, and discuss development of an actively stabilized cryogenic system. \\ \\ In collaboration with: Erika Janitz, McGill University, Rasmus Jensen, Technical University of Denmark, Yannik Fontana, Technical University of Denmark , Yi He, Carnegie Mellon University, Olivier Gobron, Technical University of Denmark, Ilya Radko, Technical University of Denmark, Mihir Bhaskar, Harvard University, Ruffin Evans, Harvard University, Cesar Daniel Rodriguez Rosenblueth, McGill University, Rigel Zifkin, McGill University, Alexander Huck, Technical University of Denmark, Ulrik Andersen, Technical University of Denmark. [Preview Abstract] |
Follow Us |
Engage
Become an APS Member |
My APS
Renew Membership |
Information for |
About APSThe American Physical Society (APS) is a non-profit membership organization working to advance the knowledge of physics. |
© 2024 American Physical Society
| All rights reserved | Terms of Use
| Contact Us
Headquarters
1 Physics Ellipse, College Park, MD 20740-3844
(301) 209-3200
Editorial Office
100 Motor Pkwy, Suite 110, Hauppauge, NY 11788
(631) 591-4000
Office of Public Affairs
529 14th St NW, Suite 1050, Washington, D.C. 20045-2001
(202) 662-8700