Session E1: Welcome Reception and Poster Session I: APS Posters I (5:45 pm - 7:30 pm)
5:45 PM–5:45 PM, Saturday, March 31, 2012
Room: Grand Hall West
Sponsoring Unit:
APS
Abstract ID: BAPS.2012.APR.E1.87
Abstract: E1.00087 : Tunable band gap in biased rhombohedral-stacked trilayer graphene
Preview Abstract
MathJax On | Off 
Abstract 
Authors:
H.B. Mihiri Shashikala
(Clark Atlanta University)
Xiao-Qian Wang
(Clark Atlanta University)
We have employed dispersion-corrected density-functional calculations to investigate the electronic characteristics of Bernal-stacked trilayer (ABA) and rhombohedral-stacked (ABC) trilayer graphene. In contrast to semimetallic behavior for Bernal-stacked trilayer, rhombohedral-stacked trilayer leads to a band gap opening with the applications of a perpendicular electric bias. The induced gap is shown to be attributed to the avoiding of level crossing among even and odd parity states that depends on the stacking pattern. The tunable band gap suggests a sensitive and effective way to tailor properties of trilayer graphene for future applications in nanoscale devices.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2012.APR.E1.87