Bulletin of the American Physical Society
Annual Meeting of the Four Corners Section of the APS
Volume 55, Number 9
Friday–Saturday, October 15–16, 2010; Ogden, Utah
Session D7: Atomic, Molecular, and Optical Physics I |
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Chair: David Allred, Brigham Young University Room: 316 |
Friday, October 15, 2010 3:30PM - 3:42PM |
D7.00001: Study of Attosecond Electron Dynamics in the Presence of Strong Fields Niranjan Shivaram, Henry Timmers, Adam Roberts, Arvinder Sandhu Two-color ionization of simple atoms in the simultaneous presence of strong near-IR and high frequency Extreme-Ultraviolet (XUV) fields is an excellent starting point for study of attosecond electron dynamics. XUV attosecond pulses obtained from high harmonic generation create electron wave-packets by exciting the atom and serve as a time marker for the evolution of electron dynamics. A strong IR pulse with controllable time delay dynamically modifies the atomic states by ``dressing'' the atom. The same field also probes the electron dynamics by ionizing the atom from such an excited state. Interferences between multiple ionization channels play a significant role in such processes. Here we study the ionization of He in the presence of XUV and two IR pulses, one of which is phase locked to the XUV pulse train and the other serves as a time-delayed probe. He$^{+}$ yield shows asymmetric oscillations as a function of delay between the XUV and the probe IR field. This asymmetry can provide information about the phase of the electron wave packet created by the XUV and the Stark shift of atomic states as a function of IR intensity. [Preview Abstract] |
Friday, October 15, 2010 3:42PM - 3:54PM |
D7.00002: Increasing Plasma Intensity in a Hollow Cathode Light Source with a Magnetic Field Anthony Willey In an effort to get higher EUV intensity, a hollow cathode plasma light source was wrapped in a solenoid to create a magnetic field in the plasma region. Confining the plasma toward the center of the source was expected to increase the intensity of the He II 304 A and He 584 A lines. An applied magnetic field of about 150 gauss increased intensity of the 584 A line, but decreased intensity at the 304 A line. [Preview Abstract] |
Friday, October 15, 2010 3:54PM - 4:06PM |
D7.00003: A Laser Lock System using Multiple Overlapping Beams Stuart Harper, Ben Francis, Christopher Erickson, Dallin Durfee We describe a system wherein the lock of trapping, ionizing, and ion resonance lasers for a Sr experiment are bootstrapped together in a single neutral atom vapor cell. This is done by overlapping beams to optically pump the atoms into the necessary states. [Preview Abstract] |
Friday, October 15, 2010 4:06PM - 4:18PM |
D7.00004: Noise characterization of an injection-locked ti:sapphire laser Daniel Thrasher, Scott Bergeson We use a microwave interferometer and an offset frequency lock to characterize the noise properties of an injection-locked ti:sapphire laser. We find a laser linewidth of 2 MHz and an rms amplitude noise of a few percent. In this presentation I will describe the laser, the interferometer, the offset lock, and the measurement results. Our results will be compared with a recently published model. [Preview Abstract] |
Friday, October 15, 2010 4:18PM - 4:30PM |
D7.00005: Design of Ion Optics for Focusing a Single Si-31 Ion from a Magneto-optical Trap with nm Precision for Si Quantum Computing Jinming Zhang, William Fairbank A scalable silicon-based quantum computer, proposed 12 years ago by B. Kane [1], requires placement of P-31 atoms 20nm apart and 10nm below the surface of a pure Si-28 substrate. A laser-cooled single-atom-on-demand source of Si-31 ions has been proposed to accomplish this [2]. As a part of this scheme, a Si-31 ion produced by resonant ionization of a single trapped Si-31 atom in a magneto-optical trap(MOT) must be transported and deposited into a Si-28 pure substrate at low energy (100eV) with high precision (1nm). After deposition, the Si-31 ion decays to 31-P. Designs for a focused ion beam system have been studied using a ray tracing program. By a tradeoff between angular spread and spot size, a focal spot approaching the desired 1 nm size has been found. \\[4pt] [1] B. E. Kane, Nature \textbf{393}, 133-137 (1998). \\[0pt] [2] W. M. Fairbank, Jr. and S. A. Lee, to be published. [Preview Abstract] |
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